Plasma-enhanced chemical vapor deposition (PECVD)

Plasma-enhanced chemical vapor deposition coating:

Plasma-enhanced chemical vapor deposition (PECVD) is a thin-film deposition technique that allows for tunable control over the chemical composition of a thin film. The films typically deposited using PECVD are silicon nitride (SixNy), silicon dioxide (SiO2), silicon oxy-nitride (SiOxNy), silicon carbide (SiC), and amorphous silicon (α-Si). Silane (SiH4), the silicon source gas, is combined with an oxygen source gas to form silicon dioxide or a nitrogen gas source to produce silicon nitride.

Numerical methods used to solve multi-scale and multi phase models and to obtain qualitative results for the delicate multiphysical processes in the chamber. Such numerical simulations help us to economize on expensive physical experiments and obtain control mechanisms for the delicate deposition process.